| 摘要 |
PURPOSE:To inhibit even the potential fluctuation of a well, and to prevent the generation of a latch-up by forming a semiconductor layer having the same conductivity type as a substrate and an impurity in high concentration between the well having a conductivity type reverse to the substrate and the substrate. CONSTITUTION:A P-well 1 and an N-well 2 are shaped onto a P-type semiconductor substrate 12, and the substrate 12 is grounded through a P-type diffusion layer 5a and the P-well 1 through a P-type diffusion layer 5b. A source in a P channel MOSFET 4 is connected to a power supply VCC, a drain to a drain in an N channel MOSFET 3 and a source in the FET 3 to ground potential, thus constituting a CMOS inverter. A high-concentration P<+> layer 13 is formed between the substrate 12 and the N-well 2, thus narrowing the width of a depletion layer, then increasing junction capacitance. |
