| 摘要 |
PURPOSE:To reduce a deterioration of the light due to the irradiation with the light by a method wherein an n-layer is formed by a-Si1-xNx and an i-layer composed of a-Si1-xNx whose (x) is smaller than that of the n-layer is laid between the n-layer and another i-layer with a view to increasing the initial photoelectric conversion efficiency even when the i-layer is thick. CONSTITUTION:An i-n interface layer film 5 composed of a-Si1-xNx is deposited on an i-layer film 4 of amorphous Si(a-Si); an n-layer film 6 composed of n-type a-Si1-xNx is deposited on the interface layer film. While a nitrogen content ratio x is kept at a definite value, the i-n interface layer film may be formed uniformly; it is desirable, however, to gradually increase the ratio toward the n-layer side between the i-layer film and the n-layer film. By this setup, an electric field in the neighborhood of the i-n interface is strengthened. Accordingly, it is suppressed that an internal electric field is weakened due to an incidence of the light on the i-layer film and the n-layer film; it is possible to prevent that an interface defect is caused due to the mismatching at a heterojunction between a-Si and a-Si1-xNx. |
