| 摘要 |
PURPOSE:To make it possible to lessen the thermal stress at the time of temperature rise of a semiconductor device by a method wherein an Al/Fe-Ni alloy/Al three-layer structural composite material is used for both of a heat sink and a metal substrate. CONSTITUTION:Three-layer structural composite materials, which are made by forming each Al layer 3 on both surfaces of an Fe-Ni alloy layer 1 in a volume percentage 0.001-70 %, are each used as a metal substrate (c) and a heat sink (b) add a semiconductor element (a) is mounted on the metal substrate (c) through the heat sink (b). The thermal expansion coefficient of these composite materials can be freely selected at a value approximate to the thermal expansion coefficient of an Si element by changing the volume percentage of Al or an Al alloy for a cladding material into 0.001-70% and moreover, the modulus of longitudinal elasticity of the materials can be freely selected at a small value. Thereby, thermal stress to be generated when the semiconductor element is mounted to be put to practical use can be minimized.
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