| 摘要 |
<p>PURPOSE:To solve the problem of exfoliation ot a gate electrode when a film thickness of the gate electrode is increased by a method wherein the gate electrode is constituted by a two-layer structure where a second metal gate electrode composed of one or more kinds out of Ta, Zr, Nb, Al is superposed on a first metal gate electrode composed of one or more kinds out of Cr, NiCr, Ti, Al. CONSTITUTION:In a thin-film transistor having a structure whose gate part is constituted by piling up gate electrodes 12, 13, a first gate insulating layer 14 and a second gate insualting layer 5 on a substrate 1 in this order, a two- layer structure (except a case where both the first metal gate electrode 12 and the second metal gate electrode 13 are composed of aluminum) where the second metal gate electrode 13 composed of one or more kinds of metals out of tantalum, zirconium, niobium and aluminum is superposed on the first metal gate electrode 12 composed of one or more kinds of metals out of chromium, nichrome, titanium and aluminum is adopted. In addition, a metal oxide layer which is obtained by oxidizing at least one part of the second metal gate electrode 13 is used as said first gate insulating film 14.</p> |
