| 摘要 |
PURPOSE:To improve the performance of a semiconductor device by forming a beta-SiC layer on an insulating film by adhering two substrates, at least one of which is covered with the film and formed with the SiC layer. CONSTITUTION:A first substrate in which an N-type beta-SiC layer 3 is formed by a hetero epitaxially growing method on an N-type Si single crystalline substrate 4, and a second substrate in which an N-type Si substrate 1 is covered by a CVD method of a thermal oxidizing method with an SiO2 film 2, are prepared. While voltages are being applied to the substrates, the substrates are heat treated at high temperature. When the applied voltages are further removed and they are annealed in nitrogen, the first and second substrates are rigidly adhered by an operation of a force between molecules. Then, the unnecessary Si single crystalline substrate 4 of the first substrate is removed by mechanical lapping or chemical etching. Further, when the film 2 on the surface opposite to that adhered with the layer 3 of the second substrate is removed and the surface layer of the layer 3 is slightly removed, a further preferable semiconductor substrate is obtained.
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