发明名称 METHOD FOR ETCHING CHROMIUM
摘要 PURPOSE:To uniformly and accurately etch Cr when a Cr-Cu two-layered film or a Cr-Cu-Cr three-layered film is patterned by selective etching through a positive type photosensitive resin. by using an aq. hydrochloric acid soln. contg. benzotriazole or a deriv. thereof as an etching soln. CONSTITUTION:A Cr layer 2 and a Cu layer 3 are successively formed on a glass substrate 1 or a Cr layer 4 is further formed and a positive type photosensitive resin 5 is put on the resulting two-or threelayered structure. The upper Cr layer 4 is etched with an etching soln. prepd. by adding 0.5g 1,2,3- benzotriazole to 100g 5N aq. hydrochloric acid soln. The Cu layer 3 is etched with 5wt.% aq. ammonium persulfate soln. The Cr layer is stably and selectively etched without etching the resin 5 and the Cu layer 3.
申请公布号 JPH01195289(A) 申请公布日期 1989.08.07
申请号 JP19880020635 申请日期 1988.01.30
申请人 TOSHIBA CORP 发明人 OKANO SUMIO;KUDO REIKO
分类号 C23F1/26;C23F1/44 主分类号 C23F1/26
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