| 摘要 |
<p>PURPOSE:To improve reliability by connecting a leak current generating circuit to an internal power source node and causing a current, which is suited to the sub threshold current of a transistor for pressure fall, to flow in a prescribed condition. CONSTITUTION:A first leak current generating circuit 8 is provided between a first internal power source node N1 and a Vss potential terminal (grounding terminal) and a second leak current generating circuit 9 is provided between a second internal power source node N2 and the grounding terminal. the both leak current generating circuits 8 and 9 cause the leak currents, which are suited to the sub threshold currents of transistors 2 and 5 for pressure fall, to flow with being respectively correspondent. Then, the potential of the nodes N1 and N2 is prevented from over-rising. Thus, stress on a setting value is not loaded to the MOS transistor of the internal circuit and the reliability is improved.</p> |
