发明名称 |
Method for maskless diffusion. |
摘要 |
A method for selectively diffusing silicon into a selected portion of a gallium arsenide substrate comprises exposing a non-selected surface portion to an argon ion plasma, thereafter applying silicon to the surface of the substrate and subjecting it to heat treatment so as to promote silicon diffusion.
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申请公布号 |
EP0352737(A2) |
申请公布日期 |
1990.01.31 |
申请号 |
EP19890113696 |
申请日期 |
1989.07.25 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SHIEH, CHAN-LONG;KOHN, ERHARD |
分类号 |
H01L21/22;H01L21/225 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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