SEMICONDUCTOR DEVICE HAVING BIPOLAR TRANSISTOR AND METHOD OF PRODUCING THE SAME,申请号EP19880309367-传众专利搜索

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发明名称	SEMICONDUCTOR DEVICE HAVING BIPOLAR TRANSISTOR AND METHOD OF PRODUCING THE SAME
摘要
申请公布号	EP0311419(A3)	申请公布日期	1990.02.14
申请号	EP19880309367	申请日期	1988.10.07
申请人	FUJITSU LIMITED	发明人	GOTOU, HIROSHI
分类号	H01L21/331;H01L21/74;H01L29/41;H01L29/417;H01L29/73;H01L29/732;(IPC1-7):H01L29/72	主分类号	H01L21/331
代理机构		代理人
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地址

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