PRODUCTION OF SEMICONDUCTOR DISPLAY DEVICE

摘要

PURPOSE:To prevent the defect of insulated gate type field effect semiconductor devices generated in a production process from affecting a display by providing the two insulated gate type field effect semiconductor devices which control the presence or absence of an electric signal to one of the 1st electrodes corresponding to respective picture elements. CONSTITUTION:The insulated gate type field effect semiconductor devices (IGF) 2, 2' are disposed in parallel and paired constitution to one of the 1st electrodes 22 corresponding to the picture elements in the picture element groups which are arranged in matrix on a substrate having an insulated surface and the display is made by controlling each of the respective picture element groups which are arranged in the matrix. Redundancy is provided to the device in this way so as to remove the defective IGF by a laser trimming method and to drive the display element only by the other even if one of the IGFs is shorted or generates the open defect. The paired constitution of the IGFs is imported to enhance the driving stress of the IGFs.