发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To reduce the power consumption of a sensor amplifying circuit, to eliminate the need of a selection use signal line of an output of the sense amplifier, and to contrive a high integration by constituting the sense amplifying circuit which is set to a non-selection state by a selecting circuit so as to output fixed data of a logical level. CONSTITUTION:This device is provided with a selecting circuit 7 for selecting only one of sense amplifying (S/A) circuits 21-2n and setting it to an active state, based on address information AS, and the S/A circuits 21-2n which are set to a non-selection state by the selecting circuit 7 output fixed data of a logical level. In such a way, since only one of the S/A circuits 21-2n becomes an active state, when the number of S/A circuits 21-2n is (n) pieces, the lower consumption as the whole S/A circuit becomes 1/n. Also, since the S/A circuits 21-2n at the time of non-selection are constituted so as to output fixed data, an area of the wiring occupied on a chip can be decreased relatively due to a fact that a signal line for selecting an S/A output becomes unnecessary. Thus the power consumption of the sense amplifying circuit is reduced, a selection use signal line of an output of the sense amplifier becomes unnecessary, and a high integration can be contrived.</p>
申请公布号 JPH02244479(A) 申请公布日期 1990.09.28
申请号 JP19890062036 申请日期 1989.03.16
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 NAGAI KENJI
分类号 G11C11/409;G11C11/401 主分类号 G11C11/409
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