| 摘要 |
PURPOSE:To form a film of uniform thickness by a method wherein a plasma confinement space is provided in a reaction chamber using an insulator, and a pair of electric fields are provided in the space using a paralleled flat-plate electrode. CONSTITUTION:The multichamber system plasmic vapor-phase reaction device, having two reaction chambers I and III of three reaction systems formed by laminating semiconductors of P, I and N types, the first preparatory chamber and a buffer chamber II to be used for transfer, has two reaction chambers 101 and 103 and a buffer chamber 102, and isolated parts 44-47 are provided between each reaction chamber. Also, reactive gas feeding hoods 17 and 18 and exhaust hoods 17' and 18' are provided independently in such a manner that the reactive gas will be brought from the feeding system to the exhaust system in a laminar flow. The upper and the lower electrodes 51, 52, 61 and 62 are provided on the whole surface inside the hoods 17, 17' and 18, and a equifield is generated in the entire space in parallel with the substrate surface. Also, the reactive gas is laminar-flowed from the upper side hood to the lower side hood 17' through the confinement space of an external frame jig 38 so that the reactive gas will be brought in parallel with the surface of the substrate 1. |
