| 摘要 |
PURPOSE:To obtain the device having high transmittance and high efficiency by specifying the transverse size and waveform characteristics of a core formed of a GaP core layer and an AlxGa1-xP clad layer to prescribed values. CONSTITUTION:The 1st clad layer 2 consisting of the AlxGa1-xP (where, for example, x=0.095) is grown by a liquid phase growth method due to a temp. difference on a GaP substrate crystal 1 having a (100) face orientation. The GaP core layer 3 is then grown by applying an optimum phosphorus vapor pressure P onto a soln. to obtain the core layer 3 having less defects. This layer is then etched to a stripe shape having 50mum or smaller width by a reac tive on-etching method using a gaseous PCl3 discharge and further, a 2nd clad layer 4 consisting of the AlxGa1-xP is formed and a buffer layer 5 consisting of GaP is formed thereon by an ordinary wet etching. The loss of this optical waveguide is small as the absorption of the GaP itself is small. The device which is extremely small by the scattering and absorbing of the heterobounary of the GaP and the AlxGa1-xP and is small in the absorption loss from 600nm to 1.6mum wavelength, i.e. from visible to near IR regions is obtd. |
