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发明名称
在绝缘体上形成薄矽层之方法
摘要
一种于绝缘层上形成薄矽层之方法,此方法系藉在一种不为矽且具有符合矽晶格结构之第一基材上,形成异质外延矽薄层。于该异质外延矽层上形成第一绝缘层。于第二矽基材之表面上,形成第二绝缘层。将第一与第二绝缘层黏结在一起,以形成整合结构,并将第一基材蚀离,藉以排除现今技术上在矽基材上使用均质外延矽所造成之蚀刻问题。
申请公布号
TW151155
申请公布日期
1991.02.01
申请号
TW079101367
申请日期
1990.02.22
申请人
姆西恩西公司
发明人
卡顿.姆.欧斯伯;杰米.杰.沃特曼;达瑞契.费契
分类号
H01L23/08
主分类号
H01L23/08
代理机构
代理人
陈长文 台北巿敦化北路二○一号七楼
主权项
地址
美国
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