| 摘要 |
PURPOSE:To prevent light emitting efficiency from lowering, driving voltage from increasing, and a service life from shortening by composing a hole transporting layer and an electron transporting layer with a P-type amorphous semiconductor and an n-type amorphous semiconductor, respectively. CONSTITUTION:A material with high work function is used for a hole injection electrode 2 which is formed on a glass substrate 1 and ITO is used as the material. A hole transporting layer 3 to be formed on the ITO electrode is composed with a P-type amorphous semiconductor and an organic phosphor layer 4 is composed with 8-hydrooxyquinoline aluminum (Alq3) and then an electron transporting layer 5 to be formed on the phosphor layer is composed with an N-type amorphous semiconductor and an electron injection electrode 6 to be formed finally is obtained by MgAg deposition. Like this, the hole transporting layer 3 and the electron transporting layer 5 are composed with a P-type amorphous semiconductor and an n-type amorphous semiconductor, respectively. As a result, without increasing driving voltage and lowering light emitting efficiency, a long service life is obtained. |
