发明名称 |
PIN JUNCTION PHOTOVOLTAIC ELEMENT HAVING I-TYPE SEMICONDUCTOR LAYER COMPRISING NON-SINGLE CRYSTAL MATERIAL CONTAINING AT LEAST ZN, SE AND H IN AN AMOUNT OF 1 TO 40 ATOMIC ( |
摘要 |
An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe1-xTex:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7 in terms of number of atoms. The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not cause any undesirable light-induced fatigue even upon continuous use for a long period of time. |
申请公布号 |
AU610231(B2) |
申请公布日期 |
1991.05.16 |
申请号 |
AU19880021674 |
申请日期 |
1988.08.30 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KATSUMI NAKAGAWA;MASAHIRO KANAI;SHUNICHI ISHIHARA;KOZO ARAO;YASUSHI FUJIOKA;AKIRA SAKAI;TSUTOMU MURAKAMI |
分类号 |
H01L31/0296;H01L31/075;H01L31/077;H01L31/18;(IPC1-7):H01L21/06;H01L21/363;H01L21/365;H01L31/027;H01L31/029 |
主分类号 |
H01L31/0296 |
代理机构 |
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代理人 |
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地址 |
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