| 摘要 |
PURPOSE: To provide a transistor in which a base metal is matched to both an emitter metal and a collector metal, with relatively flat surface structure and smaller lateral dimension by forming the emitter metal and the second part of the collector metal assigned on the first part of the collector metal at the same time, and after a base layer has been exposed, forming the base metal between the emitter metal and the second part of the collector metal. CONSTITUTION: A first part 26 of a collector metal is formed in an opening part 24 with a photoresist mask 22. Then a dielectric layer 30, not contacting the side wall of the opening part 24 is formed on a substrate structure following a lift-off process. Further, a photoresist layer 32 is formed on the dielectric layer 30. With a base metal 40 comprising a titanium layer, a platinum layer over it, and a metal furthermore over it, the base metal 40 is allowed to automatically match to both a second part 36 of the collector metal and an emitter metal 38. With this matching, the manufacturing in which the base metal 40 is relatively close to the emitter metal 38 and the collector metal comprising the first and second parts becomes possible.
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