MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To protect a semiconductor device against damage or malfunction by a method wherein a groove is formed on the scribe line region of a semiconductor wafer through a convergent ion beam, and in succession an insulating film is formed on the inner face of the groove through a convergent ion beam method. CONSTITUTION:A groove 12 100-200mum in depth is formed on the scribe line region of a wafer 11 through an FIB 13 of Ga ions accelerated up to 30KeV in a vacuum of 300-500mTorr and of a beam current of 100pA-10nA. In succession, a mixed gas 14 of SiH4 and O2 is introduced, and a silicon oxide film 15 2-4mum in thickness is formed on the surface of the groove 12 through an FIB 13 of Ga ions accelerated up to 30KeV and of a beam current of 100pA-10nA. By this setup, even if a wire 17 bonded to a metal wiring 16 on a silicon substrate 11 sags to come into contact with the edge of a chip, it is prevented from being shortcircuited.