SIC FILM FOR X-RAY LITHOGRAPHY AND PRODUCTION THEREOF AND MASK FOR X-RAY LITHOGRAPHY

摘要

PURPOSE:To obtain the SiC film which has excellent high energy beam resistance and hardly generates a fluctuation in stress by specifying the tensile stress to a specific range and incorporating crystalline SiC into the film. CONSTITUTION:The SiC film for X-ray lithography having 0.1 to 8.0X10<9>dyne/ cm<2> tensile stress and contg. the crystalline SiC is formed by a sputtering method using a target consisting of SiC on a SiC substrate at >=500 deg.C. Namely, the tensile stress of the SiC film is required to be 0.1 to 8.0X10<9>dyne/cm<2> in order to obtain the good SiC film. The tensile stress is so small that the film is hardly formed and even if the film is formed, the film is liable to wrinkle if the tensile stress of the SiC film is below 0.1X10<9>dyne/cm<2>. The tensile stress is, on the contrary, so large that the film is hardly formed and even if the film is formed, the film has an easy tendency to rupture if the tensile stress exceeds 8.0X10<9>dyne/cm<2>. The SiC film which has the high energy beam resistance and with which the change in the stress is extremely little is obtd. in this way.