| 摘要 |
PURPOSE:To enable buried contact in MOS type field effect transistors of N-type and P-type while a laminated film of polycrystalline silicon containing phosphorus, and high melting point metal is used as a gate electrode, by a method wherein a gate electrode on an active layer and the periphery is composed of a film whose main component is silicon and a high melting point metal based film, a wiring on an inert region is composed of high melting point metal based film, and either one of a source electrode or a drain electrode is composed of a high melting point metal based film in contact with silicon metal. CONSTITUTION:A gate oxide film 103 is grown on an active region 201; a polycrystalline silicon film is grown on the film 103; phosphorus is diffused; the part except a region 202 covering a gate electrode is eliminated; thereon a molybdenum silicide film is vapor deposited; an N-type polycrystal silicon films 104, 203, and molybdenum silicide films 105, 204 are formed. Finally, after a P-type diffusion layer 106 is formed by using the N-type polycrystalline silicon films 104, 203, and the molybdenum silicide films 105, 204 as masks, an interlayer insulating film 107 is formed, annealing is performed, a through hole 205 is bored in the interlayer insulating film 107, and aluminum wiring films 108 and 206 are formed. |
