| 摘要 |
PURPOSE:To produce the transparent conductive film having a low resistance by forming the transparent conductive film consisting of an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O system as its essential constituting elements by a sputtering method of a specific sputtering voltage. CONSTITUTION:A substrate 11 and a target 14 are disposed to face each other into a sputtering chamber 1 in which a vacuum state is maintained by introducing a sputtering gas, such as gaseous mixture composed of an inert gas, such as Ar, and gaseous oxygen therein. Parallel magnetic fields are formed by a permanent magnet 16 on the surface of this target 14 and the negative sputtering voltage is impressed to a cathode 12 by a DC power source 19. A magnetron discharge is thereby generated to sputter the target 14 and to form the transparent conductive film consisting of the In-O, Sn-O, Zn-O, Cd-Sn-O, and Cd-In-O systems, etc., as its essential constituting elements and added with an element to serve as a donor at need on the substrate 11. The intensity of the above-mentioned parallel magnetic fields is maintained at >=600Oe, the high-frequency electric field from a high-frequency power source 20 is superposed on the above-mentioned DC electric field and is impressed to the cathode. The sputtering voltage is regulated to <=250V in this way and the transparent conductive film having the low resistance is obtd. |
