发明名称 Solid state high resolution photography and imaging using electron trapping materials
摘要 A photography and imaging system and method using electron trapping materials. An input image is formed on an imaging plate having a layer of the electron trapping material disposed thereon. Electrons of the electron trapping material are excited from a ground level to a trapping level in a density and spatial distribution corresponding to the input image. Upon the application of infrared light, the trapped electrons are released from the trapping level and fall to the ground level, emitting visible light in a pattern reproducing the original input image. The reproduced image is viewed, or captured and displayed. Color photography and imaging is obtained by layering a number of different electron trapping materials having different wavelength emissions. Infrared photography and imaging is obtained by uniformly charging the electron trapping material with visible light, and then exposing the charged material to an infrared image.
申请公布号 US5065023(A) 申请公布日期 1991.11.12
申请号 US19890405288 申请日期 1989.09.11
申请人 QUANTEX CORPORATION 发明人 LINDMAYER, JOSEPH
分类号 G01T1/10;G01T1/29;G03C5/16 主分类号 G01T1/10
代理机构 代理人
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