| 摘要 |
<p>PURPOSE:To prevent the progress of a crank generated later inward due to dicing on the surface of a semiconductor chip into the chip by digging the surface of compound semiconductor by RIE before the dicing is executed. CONSTITUTION:After a surface passivation film 2 is formed, a region to be scribed is opened by a lithography using photoresist and following RIE with H2 and CF4 gases, and a recess 4 is formed by etching GaAs by RIE with Cl2 gas through the opening of the photoresist 3 covering the film 2 and further covering the exposed GaAs. Then, the recess is diced by the blade of a dicer to be divided into chips. Thus, a crack is not proceeded to the film 2 on the surface of an element to improve non-defective ratio and reliability of the chips.</p> |
