| 摘要 |
<p>PURPOSE:To reduce that chippings and cracks are produced at a dicing operation by a method wherein a compound semiconductor layer is formed on a silicon single-crystal wafer by a heteroepitaxial growth operation, a recessed part formed by selectively etching its dicing region is filled with silicon, the dicing region is cut and pellets are separated. CONSTITUTION:SiO2 is deposited on a GaAs layer 2 which has been formed on an Si single-crystal substrate 1 by a heteroepitaxial growth operation; an SiO2 mask 10 used to form an opening in a dicing region is formed. Then, the GaAs layer 2 is etched by an RIE method by using a chlorine-bised gas; Si of the substrate 1 is exposed; recessed parts 11 to be used as dicing regions are formed. Then, a single-crystal layer is grown in the recessed parts 11 by a selective epitaxial growth operation of Si; the recessed parts 11 are filled completely; dicing regions 12 are formed. Lastly, the SiO2 mask 10 is removed; a MESFET or the like of an LDD structure is integrated in the GaAs layer 2; after that, the dicing regions 12 are cut in the direction of arrows; individual pellets surrounded by an Si sidewall layer 3 are separated.</p> |
