发明名称 PHOTOMASK
摘要 PURPOSE:To prevent the generation of pattern defects of a substrate to be treated by the concentration of tensile stresses to pinholes and angle parts by forming effective patterns provided with roundness in the angle parts on both surfaces of a mask body. CONSTITUTION:A chromium film 2 is patterned and formed on the surface of the mask body 1 consisting of quartz or low expansion glass and the upper part is oxidized to form a chromium oxide film 3, by which the effective patterns 4 and alignment marks 5 are formed. A negative resist is applied on the rear surface of the body 1 and is exposed from the front surface side. This resist is subjected to development processing, etc. The roundness in the angle parts of this time effectively prevents the cracking of the resist. A chromium film is in succession formed and the regative resist is peeled to form the effective patterns 6. The probability that the pinhole positions of the respective patterns register each other is, therefore, extremely low even if the pinholes are generated in the patterns. The generation of the defects in the patterns of the substrate to be treated is thus prevented.
申请公布号 JPH03290661(A) 申请公布日期 1991.12.20
申请号 JP19900092213 申请日期 1990.04.09
申请人 HITACHI LTD 发明人 TANIGUCHI HIDEAKI;SHODA KATSUHIKO;KIKUMOTO ATSUSHI;SASUGA MASUMI;TSUKII NORIO;ORITSUKI RYOJI;SASANO AKIRA
分类号 G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/68
代理机构 代理人
主权项
地址