SUBSTRATE BIAS GENERATOR FOR SEMICONDUCTOR MEMORY,申请号JP19900212184-传众专利搜索

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发明名称	SUBSTRATE BIAS GENERATOR FOR SEMICONDUCTOR MEMORY
摘要
申请公布号	JPH0494566(A)	申请公布日期	1992.03.26
申请号	JP19900212184	申请日期	1990.08.10
申请人	SHARP CORP	发明人	MATSUURA YOSHIAKI
分类号	G11C11/408;G11C11/407;H01L21/822;H01L27/04;H01L27/10	主分类号	G11C11/408
代理机构		代理人
主权项
地址

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