| 摘要 |
PURPOSE:To form a light emitting window by etching a GaAsP mixed crystal layer remaining until etching of a GaInP mixed layer or an AlGaInP mixed crystal layer is stopped by using conc. nitric acid or aqueous nitric acid solution. CONSTITUTION:An m epitaxial growths are conducted on a GaAs substrate. Further, an AlGaInP is epitaxially grown thereon in a double hetero structure by an MOCVD method. After the epitaxial layer side is attached to a glass plate, the substrate side is polished up to 50+ or -2mum. Thereafter, a GaAsP and an AlGaInP are selectively etched at an ambient temperature by using conc. nitric acid with an SiO2 mask, and etched up to the surface of the AlGaInP to form a window. Further, ohmic electrodes are formed at the GaAsP and AlGaInP sides to form a light emitting diode. |
