| 摘要 |
PURPOSE:To realize a high luminance short wavelength light emitting element by growing GaAlN admixed with B on a substrate thereby drastically suppressing dislocation or distortion due to incommemsurate lattice structure and growing GaAlN crystal having low crystal defect. CONSTITUTION:An n-GaBN layer 12 is formed on an n-SiC substrate 11 and a p-GaBN layer 13 is formed thereon. Metal electrodes 14, 15 are provided thereon. When B is admixed while growing GaAlN on a substrate of SiC having relatively close lattice constant, lattice matching can be achieved. According to the method, a GaAlN layer in which B is added on the SiC substrate and lattice matching is achieved can be grown. Since crystal is grown with low defect, activation rate of dopant concentrated around a defect is enhanced and thereby a p-type crystal having low resistance can be obtained. |
