| 摘要 |
PURPOSE: To form a semiconductor laser structural body by an active layer, containing a quantum thin line that is constituted at a desorption and original position in the original position of the selected surface region or a layer of a compound semiconductor by using an induced deposition reinforcing technique in the MOCVD epitaxy. CONSTITUTION: A specific number of semiconductor layers 22 and 24 are subjected to epitaxial growth on a substrate 12. At least one of semiconductor layers or a substrate has at least one of groups 14, 26, and 34, and at least one of layers adjacent to one of the above semiconductor layers is an active quantum-well layer 42, thus generating and propagating laser beams. After an active quantum-well layer has been deposited, the epitaxial growth of the semiconductor layer is temporarily suspended. Desorption is performed selectively at an original position using optically induced deposition, a part of the quantum-well layer 42 in at lest one group is in contact with a lower semiconductor layer 24. A quantum wire is formed at one top part 40 in at least one group, thus obtaining a semiconductor laser structural body.
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