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发明名称
METHOD OF ETCHING COMPOUND SEMICONDUCTOR AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE
摘要
申请公布号
JPH0562949(A)
申请公布日期
1993.03.12
申请号
JP19910246994
申请日期
1991.08.31
申请人
NEC CORP
发明人
SUGIMOTO YOSHIMASA
分类号
H01L21/20;H01L21/302
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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