发明名称 PHOTOMASK AND PATTERN FORMING METHOD BY USING THIS PHOTOMASK
摘要 PURPOSE:To provide the photomask which can form the corresponding overhang shape of a resist pattern having an overhang shape in section to an asymmetrical shape and the pattern forming method by using this photomask. CONSTITUTION:A light attenuating part 25 having the transmittance of exposing light higher than the transmittance of a light shielding part 23 and the transmittance smaller than the transmittance of the part of a quartz glass substrate 27 not provided with the light shielding part 23 is provided in the prescribed part around the light shielding part 23 provided on the quartz glass substrate 27. The light attenuating part 25 is constituted of the pattern in which the discrete light shielding patterns 25a are arranged at the pitch below the resolution limit of a projection exposing optical system. The light shielding part 23 is constituted of a light shielding film or the edge line of the shifter for a phase shifting method. A resist is exposed via such photomask 21.
申请公布号 JPH0561180(A) 申请公布日期 1993.03.12
申请号 JP19910219080 申请日期 1991.08.30
申请人 OKI ELECTRIC IND CO LTD 发明人 JINBO HIDEYUKI;KAWAZU YOSHIYUKI;YAMASHITA YOSHIO
分类号 G03F1/34;G03F1/68;H01L21/027 主分类号 G03F1/34
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