| 摘要 |
The invention relates to infrared detectors and more especially to matrix or linear detectors including platinum silicide diodes as detector elements. In order to avoid loss of resolution due to the appearance of spurious images surrounding the bright regions of the image, it is proposed according to the invention to thin the substrate (10) which carries the diodes, to fit a reflecting layer (20) and to illuminate the detector through the front face of the substrate (the one which carries the diodes). For preference, the technology used consists in transferring the thin substrate onto a thicker substrate with the interposition of the reflecting layer between the two. This makes it possible, in particular, easily to cool the detector in such a way as to reduce its dark current. <IMAGE>
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