| 摘要 |
A pressure-contact type semiconductor device with pressure-contact electrodes for external connection is disclosed. The pressure-contact electrodes are mounted through an insulating material on a metal substrate having semiconductor elements mounted thereon side-by-side. The pressure-contact electrodes are wire-bonded to the terminals of the semiconductor elements. Flexible insulating sheets are inserted between the metal substrate and the pressure-contact electrode and between the pressure-contact electrodes respectively. The insulating sheets are fixed onto the metal substrate and the pressure-contact electrodes through an adhesive. |
