MAHUFACTURING METHOD OF DOUBLE STACK CAPACITOR

摘要

A semiconductor memory device having a double stacked capacitor is prepared for VLSI or DRAM. The production method comprises; (A) forming an oxide film (5) on the semiconductor substrate having a transistor; (B) forming a 1st contact on a side of source/drain (4) region of the transistor; (C) forming a lower storage poly (6) connected with source/drain (4) of the 1st buried contact by depositing a polysilicon, and patterning it; (D) forming a lower dielectric layer (7) on (6); (E) forming a lower plate poly (8) of polysilicon and a dielectric layer (19) and forming a 2nd buried contact on the side of (4); (F) forming an upper storage poly (11) connected with (4) of the 2nd buried contact by forming a side wall spacer (10) on the side face of 2nd buried contact, depositing a polysilicon and patterning with the same width of (6), and (G) forming an upper dielectric layer (12) on (11) an the upper plate poly (13) of polysilicon on all surface of it.