| 摘要 |
The method forms the multi-layer wiring with an etchback flatting technique. The method includes the processes of: forming the 1st wiring layer on the middle insulating layer; burying a layering insulation in the 1st wiring layer, forming an opening in a sacrificing layer, forming a contact-hole in the layering insulation by the etchback, forming the multi-wiring of Al or Al alloy by the edge-slope in the contact-hole, by the plasma-etching method.
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