发明名称 Fotovoltaisches Halbleiterbauelement und Verfahren zu seiner Herstellung
摘要 <p>A SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION A semiconductor device including a body of amorphous silicon fabricated by a glow discharge in silane and a metallic region on a surface of the body of amorphous silicon providing a surface barrier junction at the interface of the region and the body which is capable of generating a space charge region in the body of amorphous silicon.</p>
申请公布号 DE2632987(C3) 申请公布日期 1993.12.02
申请号 DE19762632987 申请日期 1976.07.22
申请人 RCA CORP., NEW YORK, N.Y., US 发明人 CARLSON, DAVID EMIL, YARDLEY, PA., US
分类号 H01L31/04;H01L21/00;H01L21/205;H01L21/28;H01L29/00;H01L29/04;H01L29/43;H01L31/068;H01L31/07;H01L31/075;H01L31/10;H01L31/20;(IPC1-7):H01L31/06;H01L31/037;H01L31/18;H01L31/028 主分类号 H01L31/04
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