发明名称 |
Metal-ceramic structure with intermediate high temperature reaction barrier layer |
摘要 |
A Si-SiC ceramic layer is bonded to a non-porous SiC substrate with the Si etched from the layer to form a relatively porous surface on the otherwise non-porous high strength SiC substrate. A quartz layer is softened by heating and forced into the pores of the porous layer to form a mechanical bond to the SiC substrate. A refractory metal layer is bonded to the quartz layer to complete the joint. A refractory metal support component is then bonded to the refractory layer whereby the quartz serves as a high strength, high temperature reaction barrier between the metal of the refractory layer and the silicon of the SiC substrate.
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申请公布号 |
US5290333(A) |
申请公布日期 |
1994.03.01 |
申请号 |
US19920984613 |
申请日期 |
1992.12.02 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
NIED, HERMAN F.;MEHAN, RICHARD L. |
分类号 |
B23K20/00;C04B37/02;F28F21/04;F28F21/08;(IPC1-7):C03C27/00 |
主分类号 |
B23K20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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