| 摘要 |
<p>A semiconductor device and method for manufacturing the same are provided to increase the net die by forming a transistor of laminating structure in the peripheral circuit region. The second active region consists of a silicon layer connecting with the first active region(12) of the semiconductor substrate(10). The silicon germanium layer is formed on the silicon layer of the PMOS reserved region. The gate(16) for PMOS is formed in upper part of the silicon germanium layer. The ratio of germanium within the silicon germanium layer is 0.05~0.35. The inter-layer dielectric(18) is formed at the upper part of the first active region. The contact hole is formed by selectively etching the inter-layer dielectric to exposes the first active region. The silicon layer is formed at the upper part of interlayer dielectric including the contact hole.</p> |
