MANUFACTURING METHOD OF ALIGNED NANOWIRE AND ELEMENT APPLICATION

摘要

A method for manufacturing aligned nanowire is provided to control the size of nanowire on the nanometer level easily and conveniently, thereby realizing mass production or high integration of application elements of the nanowire. A method for manufacturing aligned nanowire comprises the following steps of: depositing an insulating layer(2) on a substrate(1); depositing an etch preventive layer(3) on the insulating layer; depositing a sacrificial layer(4) on the etch preventive layer; partially etching the sacrificial layer in order to form a pattern for the formation of nanowire; depositing a semiconductor thin film or a metal thin film(5) on the sacrificial layer and the etch preventive layer which is exposed by the partial etching such that a horizontal and vertical layer of the semiconductor thin film or the metal thin film have uniform thickness; removing the horizontal layer; and removing the remaining sacrificial layer so as to form a semiconductor nanowire.