FLEXIBLE SUBSTRATE, FABRICATION METHOD OF THE SAME AND THIN FILM TRANSISTOR USING THE SAME

摘要

A flexible substrate, fabrication method of the same and thin film transistor using the same is provided to minimize the residual stress of the buffer layer by determining the coefficient of thermal expansion of the metallic substrate according to the property of the buffer layer. The metallic substrate(100) has the constant coefficient of thermal expansion. The buffer layer(110) is positioned in the one surface of the metallic substrate and consists of the silicon oxide film or the silicon nitride film. In case the buffer layer is the silicon oxide film, the coefficient of thermal expansion of the metallic substrate is 2.86ppm / °C to 1.48ppm / °C. In case the buffer layer is the silicon nitride film, the coefficient of thermal expansion of the metallic substrate is 3.19ppm / °C to 8.01ppm / °C. The semiconductor layer is located on the buffer layer, and includes the source and drain region and the channel region.