METHOD FOR FORMING WIRING FILM, TRANSISTOR, AND ELECTRONIC DEVICE

摘要

A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber 2 in which an object 21 to be film formed is disposed; a sputtering target 11 is sputtered in a vacuum ambience containing oxygen; and a first metallic film 23 is formed on a surface of the object 21 to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film 24 is formed on a surface of the first metallic film 23 by sputtering the sputtering target 11 in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films 23 and 24.