发明名称 |
INTERCONNECT STRUCTURE HAVING ENHANCED ELECTROMIGRATION RELIABILITY AND A METHOD OF FABRICATING SAME |
摘要 |
<p>An interconnect structure having improved electromigration (EM) reliability is provided. The inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by incorporating a EM preventing liner at least partially within a metal interconnect. In one embodiment, a“U-shaped”EM preventing liner is provided that abuts a diffusion barrier that separates conductive material from the dielectric material. In another embodiment, a space is located between the“U-shaped”EM preventing liner and the diffusion barrier. In yet another embodiment, a horizontal EM liner that abuts the diffusion barrier is provided. In yet a further embodiment, a space exists between the horizontal EM liner and the diffusion barrier.</p> |
申请公布号 |
EP2095409(A1) |
申请公布日期 |
2009.09.02 |
申请号 |
EP20070842115 |
申请日期 |
2007.09.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG, CHIH-CHAO;WANG, PING-CHUAN;WANG, YUN-YU |
分类号 |
H01L21/768;H01L23/522;H01L23/528;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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