SILICON SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

A silicon substrate and a manufacturing method thereof are provided to solve the problem of the yield deterioration in the device processes by increasing the guttering performance. A device is formed on the surface of silicon substrate(W0). The thickness(T5) of the silicon substrate is greater than 5mum and less than 40mum. The extrinsic guttering which generates the residual stress greater 5MPa and less than 200MPa is given to the rear side(W5) of the silicon substrate. The residual stress is given in the CMP process after performing the grinding work in the silicon substrate rear side. The thickness of the wafer in which device is formed is reduced up to 5mum to 40mum.