发明名称 |
Semiconductor device and manufacturing method of the same |
摘要 |
A first pad electrode layer (12) is disposed on a surface of a semiconductor substrate (10) with a first insulating film (11) between them. Then, a second insulating film (13) with a first via hole partially exposing a first pad electrode layer (12) is formed over the first pad electrode layer (12). A plug (14) is formed in the first via hole in the next process. The second pad electrode layer (15) connected to the plug (14) is disposed on the second insulating film (13). Next, a second via hole (102) reaching to the first pad electrode layer (13) from the backside of the semiconductor substrate (10) is formed. A penetrating electrode (20) and a second wiring layer (21) connected to the first pad electrode layer (13) at the bottom part of the second via hole (102) are disposed. Furthermore, a protecting layer (22) and a conductive terminal (23) are formed. Finally, the semiconductor substrate (10) is diced into the semiconductor chips. |
申请公布号 |
EP1653510(A3) |
申请公布日期 |
2009.09.02 |
申请号 |
EP20050023591 |
申请日期 |
2005.10.28 |
申请人 |
SANYO ELECTRIC CO., LTD.;KANTO SANYO SEMICONDUCTORS CO., LTD. |
发明人 |
KAMEYAMA, KOJIRO;SUZUKI, AKIRA;UMEMOTO, MITSUO |
分类号 |
H01L23/485;H01L21/768;H01L23/48 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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