HYDROGENATED NANOCRYSTALLINE SILICON THIN FILMS USING DC BIAS AND PREPARATION METHOD THEREOF

摘要

A hydrogenated nanocrystalline silicon thin film and a manufacturing method thereof are provided for use in manufacturing light-emitting diodes, optical memory elements and solar batteries with excellent optical properties. A method for manufacturing a hydrogenated nanocrystalline silicon thin film using PECVD method comprises: a first step of depositing hydrogenated amorphous silicon thin film; and a second step of applying high frequency discharge and direct-current bias to the deposited silicon thin film in order to form nanocrystalline silicon. In the second step, a mixed gas of SiH4 and H2 is used for generating the nanocrystalline silicon. The mixed gas consists of 2 ~ 4 sccm of SiH4 and 90 ~ 110 sccm of H2. The hydrogenated nanocrystalline silicon is surrounded by amorphous silicon consisting of Si-H2 or Si-H3 bonds. The nanocrystalline silicon has the size of 1-10nm.