发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS, AND SYSTEM FOR PROCESSING APPLICATION AND DEVELOPMENT OF RESIST
摘要 <p>A method of manufacturing a semiconductor apparatus, and system for processing application and development of resist are provided to reduce the manufacturing cost and improve throughput. The resist layer(3) is formed on the under layer(1). The exposure pattern consisting of the pattern of the disuse layer(3b) and insoluble layer(3a) is formed on the resist layer. The insoluble layer is removed from the resist layer to form the resist pattern(3c). The middle exposure region(3d) is removed from the resist pattern. The new insoluble layer(3e) is formed in the surface of the resist pattern in which reactant is introduced. The new insoluble layer is removed from the resist pattern.</p>
申请公布号 KR20090093802(A) 申请公布日期 2009.09.02
申请号 KR20090007118 申请日期 2009.01.29
申请人 TOKYO ELECTRON LIMITED 发明人 IWAO FUMIKO;SHIMURA SATORU;KAWASAKI TETSU
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址
您可能感兴趣的专利