VERTICAL TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A vertical type semiconductor device and manufacturing method thereof are provided to improve the performance characteristic of the cell transistor using a filler type crystal semiconductor pattern. The insulating layer pattern(114) of the line shape is formed on the substrate(100). The single-crystal semiconductor pattern(112a) of the filler shape is formed on the substrate surface while contacting with the both sidewalls of the insulating layer pattern. Transistors are formed at the sidewall of each single-crystal semiconductor pattern in a vertical direction. At least one part the tunnel oxide film(122) is contacted with the side wall of the single-crystal semiconductor pattern. The charge trapping layer(124) and blocking dielectric layer are formed on the surface of the tunnel oxide film. The control gate pattern(130a) is formed on the surface of the blocking dielectric film.