DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A display device and manufacturing method thereof are provided to form the thin film transistor having high electric field effect mobility by stacking sequentially a polycrystalline semiconductor film and an amorphous semiconductor layer. The p type thin film transistor TFT(pD) is formed on the substrate(SUB1). The p type thin film transistor is formed by interposing the insulating layer(GI) in the upper side of the gate electrode. The drain electrode(DT) and the source electrode(ST) are formed on the upper side of the semiconductor layer. The diffusion layer of the p-type impurity is formed in the interface of the drain electrode and the semiconductor layer. The semiconductor layer consists of the polycrystalline semiconductor film. The semiconductor layer is comprised of the sequential laminate of the amorphous semiconductor film and polycrystalline semiconductor film.