发明名称 |
ONE TRANSISTOR DRAM CELL STRUCTURE AND METHOD FOR FORMING |
摘要 |
<p>A one-transistor dynamic random access memory (DRAM) cell includes a transistor (10) which has a first source/drain region (26) a second source/drain region (24), a body region (36) between the first and second source/drain regions, and a gate (28) over the body region. The first source/drain region includes a Schottky diode junction with the body region and the second source/drain region includes an n-p diode junction with the body region.</p> |
申请公布号 |
KR20090093938(A) |
申请公布日期 |
2009.09.02 |
申请号 |
KR20097009009 |
申请日期 |
2007.08.30 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
BURNETT JAMES D.;WINSTEAD BRIAN A. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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