PHASE CONTROLLING METHOD BETWEEN RUTHENIUM THIN FILM AND CONDUCTIVE RUTHENIUM OXIDE THIN FILM BY CONTROLLING THE DEPOSITION TEMPERATURE IN ATOMIC LAYER DEPOSITION

摘要

A phase controlling method between ruthenium thin film and conductive ruthenium oxide thin film by controlling the deposition temperature in atomic layer deposition is provided to improve device character and convenience of device fabrication by selectively changing phase between ruthenium layers or ruthenium oxide thin films. A phase controlling method between ruthenium thin film and conductive ruthenium oxide thin film by controlling the deposition temperature in atomic layer deposition comprises following steps. The ruthenium precursor vaporized on a heated substrate is injected into a reaction chamber with the argon gas for 2 seconds. A bubbler filled with the precursor is x with is heated at 65°C. The temperature of a feeding line is maintained at 10 ~ 15°C temperature higher than the bubbler. The flow rate of the argon gas is maintained as 20 sccm. The argon purging gas of 50 sccm is injected into the chamber for 2 seconds. The oxygen gas of 10 sccm is injected into the chamber for 2 seconds. The argon purging gas of 50 sccm is injected into the camber for 2 seconds. The precursor of the ruthenium is the Ru2. The substrate temperature is maintained at 300±25°C when depositing the ruthenium metal thin film.